Optical and reduced band gap in n- and p-type GaN and AlN

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3207-3216

  Persson, C ^a,b   Sernelius, Bo E ^c   Ferreira Da Silva, A ^d   Araújo, C Moysés ^d   Ahuja, R ^a   Johansson, B ^a,b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND GAP ENERGY; BAND STRUCTURE CALCULATION; CONDUCTION-BAND MINIMUM; ENERGY DISPERSIONS; ENERGY SHIFT; FULL BAND; FULL BAND STRUCTURES; HEAVILY DOPED; HUBBARD; IONIZED IMPURITIES; NON PARABOLICITY; OVERLAP INTEGRALS; P-TYPE GAN; PHOTOLUMINESCENCE MEASUREMENTS; RANDOM PHASE APPROXIMATIONS; SPIN ORBIT INTERACTIONS; VALENCE-BAND MAXIMUMS; WURTZITES; ZERO TEMPERATURES; ZINC-BLENDE;

APPROXIMATION ALGORITHMS; CHEMICAL BONDS; ENERGY GAP; MOLECULAR ORBITALS; VALENCE BANDS; WAVE FUNCTIONS; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 18644365978     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504499     Document Type: Article

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