Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN

Journal of Physics Condensed Matter

Volumn 13, Issue 40, 2001, Pages 8915-8922

  Persson, C ^a   Sernelius, Bo E ^b   Ferreira Da Silva, A ^c   Ahuja, R ^a   Johansson, B ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); ELECTRONS; GREEN'S FUNCTION; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

LOCAL FIELD CORRECTION; RANDOM PHASE APPROXIMATION; SPIN-ORBIT COUPLING; WURTZITE;

ELECTRONIC STRUCTURE;

EID: 0035828770     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/40/305     Document Type: Article

References (12)