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Journal of Physics Condensed Matter

Volumn 13, Issue 40, 2001, Pages 8891-8899

Influence of Si doping on optical properties of wurtzite GaN

(6) Ferreira Da Silva, A a Moyses Araujo C a Sernelius, Bo E b Persson, C c Ahuja, R c Johansson, B c

a FEDERAL UNIVERSITY OF BAHIA (Brazil)

b OAK RIDGE NATIONAL LABORATORY (United States)

c UPPSALA UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ENERGY GAP; OPTICAL PROPERTIES; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON;

BAND GAP SHIFT; DRUDE APPROACH; ELECTRON-ELECTRON INTERACTION; ELECTRON-ION INTERACTION; ELECTRON-OPTICAL INTERACTION; SILICON DOPING; WURTZITE GALLIUM NITRIDE;

SEMICONDUCTOR DOPING;

EID: 0035828689 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/40/303 Document Type: Article

Times cited : (13)

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