AlGaInN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

IEE Proceedings: Optoelectronics

Volumn 152, Issue 2, 2005, Pages 118-124

  Blume, G ^a   Hosea, T J C ^a   Sweeney, S J ^a   De Mierry, P ^b   Lancefield, D ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC FIELDS; METALLORGANIC VAPOR PHASE EPITAXY; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTROMODULATED REFLECTIVITY (ER); QYANTUM-CONFINED STARK-EFFECT; RADIATIVE LIFETIME; RESONANT-CAVITY LIGHT-EMITTING DIODES (RCLED);

LIGHT EMITTING DIODES;

EID: 18444414883     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20045020     Document Type: Article

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