Vertical cavity InGaN LEDs grown by MOVPE

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 2, 2002, Pages 335-340

  De Mierry, P ^a   Bethoux, J M ^a   Schenk, H P D ^a   Vaille, M ^a   Feltin, E ^a   Beaumont, B ^a   Leroux, M ^a   Dalmasso, S ^a   Gibart, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; HELIUM NEON LASERS; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTOMETERS; RESONANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS (DBR); RESONANT CAVITY LIGHT EMITTING DIODES (RCLED);

LIGHT EMITTING DIODES;

EID: 0036672391     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200208)192:2<335::AID-PSSA335>3.0.CO;2-M     Document Type: Conference Paper

References (15)