Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48 P system as studied by luminescence spectroscopy

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 384-389

  Vignaud, D ^a   Mollot, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRAIN;

CONDUCTION BAND OFFSET (CBO);

HETEROJUNCTIONS;

EID: 0037245775     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528309     Document Type: Article

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