Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 189-193

  Kunzer, M ^a   Baur, J ^a   Kaufmann, U ^a   Schneider, J ^a   Amano, H ^b   Akasaki, I ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MAGNESIUM; MAGNETIC RESONANCE MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; ZINC;

ACCEPTOR HOLE; OPTICAL DETECTED MAGNETIC RESONANCE (OMDR); WURTZITE GALLIUM NITRIDE (GAN) LAYER;

OPTICAL FILMS;

EID: 0031079388     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00164-5     Document Type: Article

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