Surface study of iridium buffer layers during the diamond bias enhanced nucleation in a HFCVD reactor

Diamond and Related Materials

Volumn 13, Issue 3, 2004, Pages 401-413

  Arnault, J C ^a   Vonau, F ^b   Mermoux, M ^c   Wyczisk, F ^d   Legagneux, P ^d  

^a DIF   (France)

^b UNIVERSITÉ DE HAUTE ALSACE   (France)

^c LEPMI   (France)

^d THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

Auger electron spectroscopy; Bias enhanced nucleation; Chemical vapour deposition; Graphite; Iridium; Raman spectroscopy; X Ray photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIAMONDS; ELECTRON SPECTROSCOPY; GRAPHITE; IRIDIUM; NUCLEATION; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

HOT FILAMENT REACTOR; INTERFACE FORMATION;

SURFACE REACTIONS;

DIAMOND;

EID: 1842785389     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.11.092     Document Type: Article

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