Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition

Diamond and Related Materials

Volumn 9, Issue 7, 2000, Pages 1380-1387

  Tsubota, Toshiki ^a   Ohta, Masanari ^a   Kusakabe, Katsuki ^a   Morooka, Shigeharu ^a   Watanabe, Midori ^a   Maeda, Hideaki ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

CVD; Diamond heteroepitaxy; Substrate

Indexed keywords

COATING TECHNIQUES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; IRIDIUM; MAGNESIA; METHANE; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPUTTERING; SUBSTRATES;

BIAS ENHANCED NUCLEATION; HETEROEPITAXIAL GROWTH; MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0033705516     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00263-6     Document Type: Article

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