Flat epitaxial diamond/Ir(0 0 1) interface visualized by high resolution transmission electron microscopy

Surface Science

Volumn 513, Issue 3, 2002, Pages 525-529

  Hormann F ^a   Peng, H Y ^b   Bauer, Th ^a   Li, Q ^b   Schreck, M ^a   Lifshitz, Y ^b   Lee, S T ^b   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Chemical vapor deposition; Diamond; Electron microscopy; Epitaxy; Interface states; Iridium

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DIAMONDS; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NUCLEATION; SUBSTRATES; SURFACE ROUGHNESS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

CRYSTALLINE MATERIALS;

EID: 0036679930     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01852-6     Document Type: Article

References (26)