Effect of surface steps on oxide-cluster nucleation and sticking of oxygen on si(001) surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 15, 1999, Pages 10138-10144

  Brichzin, V ^a   Pelz, J P ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001527499     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.10138     Document Type: Article

References (21)

1. M. Offenberg, M. Liehr, and G. W. Rubloff, J. Vac. Sci. Technol. A 9, 1058 (1991).
2. J. V. Seiple and J. P. Pelz, Phys. Rev. Lett. 73, 999 (1994).
3. J. V. Seiple and J. P. Pelz, J. Vac. Sci. Technol. A 13, 772 (1995).
4. J. V. Seiple, C. Ebner, and J. P. Pelz, Phys. Rev. B 53, 15 432 (1996).
5. K. Wurm, R. Kliese, Y. Hong, B. Röttger, Y. Wei, H. Neddermeyer, and I. S. T. Tsong, Phys. Rev. B 50, 1567 (1994).
6. F. W. Smith and G. Ghidini, J. Electrochem. Soc. 129, 1300 (1982).
7. F. M. Ross, J. M. Gibson, and R. D. Twesten, Surf. Sci. 310, 243 (1994).
8. A. Feltz, U. Memmert, and R. J. Behm, Chem. Phys. Lett. 192, 271 (1992).
9. F. Donig, A. Feltz, M. Kulakov, H. E. Hessel, U. Memmert, and R. J. Behm, J. Vac. Sci. Technol. B 11, 1955 (1993).
10. A. Feltz, U. Memmert, and R. J. Behm, Surf. Sci. 314, 34 (1994).
11. Y. Wei, R. M. Wallace, and A. C. Seabaugh, J. Appl. Phys. 81, 6415 (1996).
12. (a) J. V. Seiple, Ph.D. thesis, The Ohio State University, 1996;(b) we define the “reactive” sticking coefficient as the fraction of incident (Formula presented) molecules that react with Si to form SiO or (Formula presented) via the exothermic reactions (Formula presented) or (Formula presented) For completeness, we note that we cannot measure reacted oxygen that undergoes one of the back reactions (Formula presented) or (Formula presented) However, we expect these back reactions to be negligible since they are highly endothermic.
13. X. Tong and P. A. Bennett, Phys. Rev. Lett. 67, 101 (1991).
14. Digital Instruments “Dimension 3000” AFM.
15. O. L. Alerhand, A. N. Berker, J. D. Joannopoulos, D. Vanderbilt, R. J. Hamers, and J. E. Demuth, Phys. Rev. Lett. 64, 2406 (1990).
16. E. Pehlke and J. Tersoff, Phys. Rev. Lett. 67, 465 (1991).
17. B. S. Swartzentruber, N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. B 47, 13 432 (1993).
18. W. Daum, H.-J. Krause, U. Reichel, and H. Ibach, Phys. Rev. Lett. 71, 1234 (1993).
19. O. L. Alerhand, D. Vanderbilt, R. D. Meade, and J. D. Joannopoulous, Phys. Rev. Lett. 61, 1973 (1988).
20. This rough estimate was made by assuming an oxygen atom “jump” length equal to the surface lattice constant (Formula presented) on Si(001). Then the total number of jumps N before an O atom reaches a cluster is (Formula presented) and the average number of step crossings is (Formula presented)
21. Y.-W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Surf. Sci. 268, 275 (1992).