Island formation during deposition or etching

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 165, Issue 1-3, 2000, Pages 373-403

  Bartelt, M C ^a   Hannon, J B ^b   Schmid, A K ^a   Stoldt, C R ^c   Evans, J W ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c IOWA STATE UNIVERSITY   (United States)

^d IOWA STATE UNIVERSITY   (United States)

Author keywords

Cobalt; Copper; Epitaxy; Etching; Growth; Low energy electron microscopy; Low index single crystal surfaces.; Models of non equilibrium phenomena; Nucleation; Oxygen; Ruthenium; Scanning tunneling microscopy; Silicon

Indexed keywords

COBALT; COPPER; DEPOSITION; EPITAXIAL GROWTH; ETCHING; NUCLEATION; OXYGEN; RUTHENIUM; SILICON; SILVER; SINGLE CRYSTALS;

ISLAND FORMATION;

SURFACE PHENOMENA;

COBALT; COPPER; RUTHENIUM; SILICON; SILVER;

ADSORPTION; ARTICLE; ELECTRON MICROSCOPY; MODEL; PARTICLE SIZE; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY;

EID: 0033956410     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-7757(99)00419-7     Document Type: Article

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