Nitrogen impurity incorporation behavior in a chimney HTCVD process: Pressure and temperature dependence

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 151-154

  Zhang, J ^a   Ellison, A ^a   Henry, A ^a,b   Linnarsson, M K ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

C Si ratio; HTCVD; Nitrogen doping; Pressure; SiC; Temperature

Indexed keywords

HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION (HTCVD);

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; NITROGEN; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

SEMICONDUCTING FILMS;

EID: 0032661860     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00490-5     Document Type: Article

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