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Volumn 61-62, Issue , 1999, Pages 151-154
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Nitrogen impurity incorporation behavior in a chimney HTCVD process: Pressure and temperature dependence
a
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Author keywords
C Si ratio; HTCVD; Nitrogen doping; Pressure; SiC; Temperature
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Indexed keywords
HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION (HTCVD);
ACTIVATION ENERGY;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
CRYSTAL IMPURITIES;
EPITAXIAL GROWTH;
HIGH TEMPERATURE EFFECTS;
NITROGEN;
PRESSURE EFFECTS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
SEMICONDUCTING FILMS;
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EID: 0032661860
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00490-5 Document Type: Article |
Times cited : (10)
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References (10)
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