High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(0001̄) Face Using H2 Post-Oxidation Annealing

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 567-570

  Fukuda, Kenji ^a   Senzaki, Junji ^a   Kojima, Kazutoshi ^a   Suzuki, Takaya ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Carbon Face; Channel Mobility; Hydrogen; MOSFET; Post Oxidation Annealing

Indexed keywords

ANNEALING; BAND STRUCTURE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRONIC DENSITY OF STATES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STACKING FAULTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHANNEL MOBILITY;

MOSFET DEVICES;

EID: 0242496534     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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