Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5820-5825

  Downes, James E ^a   Smith, Kevin E ^a   Matsuura, A Y ^b,d   Lindau, Ingolf ^b   Iliopoulos, Eleftherios ^c   Moustakas, Theodore D ^c  

^a Boston University   (United States)

^b LUND UNIVERSITY   (Sweden)

^c Boston University   (United States)

^d US Army Research Office   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MICROSCOPIC EXAMINATION; PHASE SEPARATION; PHOTOEMISSION; SEMICONDUCTING FILMS; SPUTTERING; ULTRAHIGH VACUUM; VAPOR PRESSURE;

ION SPUTTERING;

ELECTRONIC STRUCTURE;

EID: 0242636852     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1617356     Document Type: Article

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