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Volumn 91, Issue 8, 2002, Pages 5190-5194

Band gaps and lattice parameters of 0.9 μm thick In xGa 1-xN films for 0≤x≤0.140

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLINGS; GAP MEASUREMENTS; HIGH INTENSITY LASER PULSE; PHOTOCURRENT SPECTROSCOPY; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE SPECTRUM; PULSED NITROGEN LASER; RESEARCH GROUPS; VEGARD'S LAW;

EID: 0037091485     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462851     Document Type: Article
Times cited : (17)

References (30)
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  • 9
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  • 14
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    • (1994) Properties of GrouIII Nitrides , pp. 30-34
    • Akasaki, I.1    Amano, H.2
  • 16
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    • edited by J. H. Edgar (Electronic Material Information Service, London)
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    • (1994) Properties of GrouIII Nitrides , pp. 35-40
    • Tansley, T.L.1
  • 19
    • 84861431464 scopus 로고    scopus 로고
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  • 20
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    • (1959) Phys. Rev. , vol.116 , pp. 84
    • Gärtner, W.W.1
  • 24
    • 0242548817 scopus 로고
    • edited by J. H. Edgar (Electronic Material Information Service, London)
    • J. A. Miragliotta, in Properties of Group III Nitrides, edited by J. H. Edgar (Electronic Material Information Service, London, 1994), pp. 190-194.
    • (1994) Properties of GrouIII Nitrides , pp. 190-194
    • Miragliotta, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.