Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Monemar, B ^a   Bergman, J P ^a   Dalfors, J ^a   Pozina, G ^a   Sernelius, B E ^a   Holtz, P O ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; IMPACT IONIZATION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS;

EXCITATION INTENSITY; GROWTH TEMPERATURES; PIEZOELECTRIC FIELDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84862393082     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000727     Document Type: Article

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