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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 480-485

Pulsed-laser-induced microcrystallization and amorphization of silicon thin films

(2) Higashi, Seiichiro a Sameshima, Toshiyuki b

a SEIKO EPSON CORPORATION (Japan)

b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

Amorphization; Microcrystallization; Nucleation; Pulsed laser; Supercooling

Indexed keywords

AMORPHIZATION; COOLING; CRYSTALLIZATION; ELECTRIC VARIABLES MEASUREMENT; NUCLEATION; OPTICAL VARIABLES MEASUREMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SOLIDIFICATION; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

LASER AMORPHIZATION; PULSED LASER INDUCED MICROSCRYTALLIZATION; TRANSIENT REFLECTANCE;

SEMICONDUCTING SILICON;

EID: 0035246460 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.480 Document Type: Article

Times cited : (52)

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