Phase variation of amorphous-Si and poly-Si thin films with excimer laser irradiation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 11 SUPPL. B, 1996, Pages

  Kitahara, Kuninori ^a   Suga, Katsuyuki ^a   Hara, Akito ^a   Nakajima, Kazuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Amorphous; Excimer laser; Laser crystallization; Microcrystal; Phase transition; Poly Si; Polycrystal; Raman; Stress

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; DEGRADATION; EXCIMER LASERS; IRRADIATION; LASER BEAM EFFECTS; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EXCIMER LASER IRRADIATION; LASER CRYSTALLIZATION; MICROCRYSTALS; POLYSILICON THIN FILMS;

SEMICONDUCTING SILICON;

EID: 0030286740     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1473     Document Type: Article

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