Macroporous silicon-based deep anisotropic etching

Journal of Micromechanics and Microengineering

Volumn 15, Issue 4, 2005, Pages 764-770

  Tao, Yi ^a   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; ELECTROLYTES; MICROMACHINING; POROUS MATERIALS; SILICON; SILICON WAFERS;

ELECTROLYTE FLOW; SILICON DEEP ANISOTROPIC ETCHING; SILICON RESISTIVITY; WAFER ORIENTATION;

REACTIVE ION ETCHING;

EID: 17444403586     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/15/4/013     Document Type: Article

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