Local formation of macroporous silicon through a mask

Journal of Micromechanics and Microengineering

Volumn 14, Issue 10, 2004, Pages 1411-1415

  Tao, Yi ^a   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DRY ETCHING; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON CARBIDE; SILICON NITRIDE;

ANODIZATION; CRYSTAL ORIENTATIONS; MEMS; WET ETCHING;

SILICON;

EID: 7044254944     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/10/017     Document Type: Article

References (6)

1. Ottow S, Lehmann V and Foil H 1996 Development of three-dimensional microstructure processing using macroporous n-type silicon Appl. Phys. A 63 153-9
2. Nassiopoulos G 1997 Local formation and patterning of porous silicon, Section 1.10 in Properties of porous silicon ed L Canham (INSPEC) (References therein)
3. Steiner P and Lang W 1995 Micromachining applications of porous silicon Thin Solid Films 255 52-8
4. Plummer J, Deal M and Griffin P 2000 Silicon VLSI Technology-Fundamentals, Practice and Modeling (New York: Prentice Hall) pp 561-2
5. 2 insulation layers on donors generation in surface layer of Czochralski grown silicon Proc. SPIE 3725 218-21
6. Ohji H, Gennissen P T J, French P J and Tsutsumi K 2000 Fabrication of a beam-mass structure using single-step electrochemical etching for micro structures (SEEMS) J. Micromech. Microeng. 10 440-4