Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid

Sensors and Actuators, A: Physical

Volumn 73, Issue 1-2, 1999, Pages 95-100

  Ohji, H ^a   Trimp, P J ^a   French, P J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTROCHEMISTRY; ETCHING; HYDROFLUORIC ACID; POROUS SILICON; SINGLE CRYSTALS;

ELECTROCHEMICAL ETCHING; FREE STANDING STRUCTURES;

MICROMACHINING;

EID: 0033537531     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00260-X     Document Type: Article

References (15)

1. Uhhr A. Electrolytic shaping of germanium and silicon. Bell Tech. J. 35:1956;333-347.
2. Turner D.R. Electropolishing silicon in HF acid solutions. J. Electrochem. Soc. 105:1958;402-408.
3. Esashi M., Komatsu H., Matsuo T., Takahashi M., Takishima T., Imabayashi K., Ozawa H. Fabrication of catheter ups and sidewall miniature pressure sensors. IEEE Trans Electron Devices. 29:1982;57-63.
4. Steiner P., Richter A., Lang W. Using porous silicon as a sacrificial layer. J. Micromech. Microeng. 3:1993;32-36.
5. Bell T.E., Gennissen P.T.J., DeMunter D., Kuhl M. Porous silicon as a sacrificial material. J. Micromech. Microeng. 6:1996;361-369.
6. Lehmann V., Gosele Porous silicon formation: a quantum wire effect. Appl. Phys. Lett. 58:1991;856-858.
7. Lehmann V. The physics of macropore formation in low doped n-type silicon. J. Electrochem Soc. 140:1993;2836-2843.
8. Ottow S., Lehmann V., Foll H. Processing of three-dimensional microstructures using macroporous n-type silicon. J. Electrochem. Soc. 143:1996;385-390.
9. V. Lehmann, Porous silicon - a new material for MEMS, IEEE MEMS Workshop '96, San Diego, USA, 1996, pp. 1-6.
10. H. Ohji, S. Lahteenmaki, P.J. French, Macro porous silicon formation for micromachining, Proceedings SPIE, Micromachining and Microfabrication Process Technology III, Austin, TX, USA, September 1997, pp. 189-197.
11. Chuang S.F., Collins S.D., Smith R.L. Preferential propagation of pores during the formation of porous silicon: a transmission electron microscopy study. Appl. Phys. Lett. 55:1989;675-677.
12. Theunissen M.J.J. Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid. J. Electrochem. Soc. 119:1972;351-360.
13. Smith R.L., Collins S.D. Porous silicon formation mechanisms. J. Appl. Phys. 71(8):1992;R1-R22.
14. Lehmann V., Foll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc. 137:1990;653-659.
15. Zhang X.G., Collins S.D., Smith R.L. Porous silicon formation and electropolishing of silicon by anodic polarization in HF solution. J. Electrochem. Soc. 136:1989;1561-1565.