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Volumn 10, Issue 3, 2000, Pages 440-444

Fabrication of a beam-mass structure using single-step electrochemical etching for micro structures (SEEMS)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ETCHING; MICROMACHINING;

EID: 0034274487     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/3/320     Document Type: Article
Times cited : (28)

References (12)
  • 1
    • 84885757292 scopus 로고
    • Electrolytic shaping of germanium and silicon
    • Uhlir A 1956 Electrolytic shaping of germanium and silicon Bell Tech. J. 35 333-47
    • (1956) Bell Tech. J. , vol.35 , pp. 333-347
    • Uhlir, A.1
  • 2
    • 84975353142 scopus 로고
    • Electropolishing silicon in HF acid solutions
    • Turner D R 1958 Electropolishing silicon in HF acid solutions J. Electrochem. Soc. 105 402-8
    • (1958) J. Electrochem. Soc. , vol.105 , pp. 402-408
    • Turner, D.R.1
  • 3
    • 33644910106 scopus 로고
    • Porous silicon formation mechanisms
    • Smith R L and Collins S D 1992 Porous silicon formation mechanisms J. Appl. Phys. 71 R1-R22
    • (1992) J. Appl. Phys. , vol.71
    • Smith, R.L.1    Collins, S.D.2
  • 8
    • 0033537531 scopus 로고    scopus 로고
    • Fabrication of free standing structure using single-step electrochemical etching in hydrofluoric acid
    • Ohji H, Trimp P J and French P J 1999 Fabrication of free standing structure using single-step electrochemical etching in hydrofluoric acid Sensors Actuators A 73 95-100
    • (1999) Sensors Actuators A , vol.73 , pp. 95-100
    • Ohji, H.1    Trimp, P.J.2    French, P.J.3
  • 9
    • 0025386899 scopus 로고
    • Formation mechanism and properties of electrochemically etched trenches in n-type silicon
    • Lehmann V and Foll H 1990 Formation mechanism and properties of electrochemically etched trenches in n-type silicon J. Electrochem. Soc. 137 653-9
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 653-659
    • Lehmann, V.1    Foll, H.2
  • 10
    • 0027677480 scopus 로고
    • The physics of macropore formation in low doped n-type silicon
    • Lehmann V 1993 The physics of macropore formation in low doped n-type silicon J. Electrochem. Soc. 140 2836-43
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 2836-2843
    • Lehmann, V.1
  • 11
    • 0032633051 scopus 로고    scopus 로고
    • Single-step electrochemical etching in ammonium fluoride
    • Ohji H and French P J 1999 Single-step electrochemical etching in ammonium fluoride Sensors Actuators A 74 109-12
    • (1999) Sensors Actuators A , vol.74 , pp. 109-112
    • Ohji, H.1    French, P.J.2
  • 12
    • 0029228175 scopus 로고
    • Micromachining applications of porous silicon
    • Steiner P and Lang W 1995 Micromachining applications of porous silicon Thin Solid Films 225 52-8
    • (1995) Thin Solid Films , vol.225 , pp. 52-58
    • Steiner, P.1    Lang, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.