Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1468-1473

  Lim, Sang Woo ^a   Shimogaki, Yukihiro ^a   Nakano, Yoshiaki ^a   Tada, Kunio ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Dielectric constant; Electronic polarization; Ionic polarization; Plasma enhanced chemical vapor deposition; Refractive index; Si O stretching; Step coverage; Sticking probability

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM GROWTH; FILM PREPARATION; FLUORINE; PERMITTIVITY; PLASMA APPLICATIONS; POLARIZATION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC POLARIZATION; INTERLAYER FILMS; IONIC POLARIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXYGEN STRETCHING; STEP COVERAGE; STICKING PROBABILITY;

DIELECTRIC FILMS;

EID: 0030079658     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1468     Document Type: Article

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