Influence of barrier and cap layer deposition on the properties of capped and non-capped porous silicon oxide

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 45-52

  Schulz, S E ^a   Koernerb, H ^b   Murray, C ^a   Streiter, I ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; POROUS SILICON; SILICA;

BARRIER-CAP LAYER DEPOSITION; XEROGELS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0034825410     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00427-5     Document Type: Article

References (5)

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3. C.J. Brinker, G.W. Scherrer, Sol Gel Science, Academic Press, 1990.
4. T. Winkler, S.E. Schulz, T. Gessner, in: MRS Symp. Proc. ULSI XII, MRS Warrendale PA, 1998, pp. 347-351.
5. H.-S. Yang, S.-Y. Choi, S.-H. Hyun, H.-H. Park, J.-K. Hong, Non Crystalline Solids 221 (1997) 151-156.