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Volumn 175-177, Issue , 2001, Pages 214-218

High-dose ion implantation into GaN

Author keywords

Decomposition; Defects; Erosion; GaN; Implantation; Porosity

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; POROSITY; POROUS MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 16744367799     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00672-8     Document Type: Conference Paper
Times cited : (19)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.