Ion beam characterisation and modification of porous silicon

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 271-278

  Paszti F ^a   Battistig, G ^b  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CHEMICAL MODIFICATION; CRYSTAL STRUCTURE; ION BEAMS; ION IMPLANTATION; MORPHOLOGY; PLASMA APPLICATIONS; PORE SIZE;

ANODIZATION; ION BEAM ANALYSIS; PLASMA IMMERSION ION IMPLANTATION; PORE PROPAGATION; PORE WALL DECORATION;

POROUS SILICON;

EID: 1642476498     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<271::AID-PSSA271>3.3.CO;2-R     Document Type: Article

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