Ion beam synthesis of chromium silicide on porous silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 926-930

  Ramos, A R ^a,b   Conde, O ^c   Paszti F ^d   Battistig, G ^e   Vazsonyi E ^e   Da Silva, M R ^a,b   Da Silva, M F ^a,b   Soares, J C ^a,b  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

^d WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^e RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHROMIUM COMPOUNDS; IMPURITIES; ION BEAMS; ION IMPLANTATION; OXYGEN; RESONANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRUCTURE (COMPOSITION); SYNTHESIS (CHEMICAL); TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

CHROMIUM SILICIDE; ELASTIC RECOIL DETECTION MEASUREMENTS; FOUR POINT PROBE RESISTIVITY MEASUREMENTS; GLANCING INCIDENCE X RAY DIFFRACTION; ION BEAM SYNTHESIS; POROUS STRUCTURE; SILICIDE LAYER;

POROUS SILICON;

EID: 0033904963     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00812-5     Document Type: Article

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