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Volumn 248-249, Issue , 1997, Pages 233-236
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Plasma immersion ion implantation of nitrogen into porous silicon layers
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Author keywords
Ion Beam Analysis; Ion Implantation; Plasma Immersion; Porous Silicon
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Indexed keywords
CRYSTAL IMPURITIES;
ION BEAMS;
ION IMPLANTATION;
NITROGEN;
PLASMAS;
PRESSURE EFFECTS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SINGLE CRYSTALS;
SUBSTRATES;
NITROGEN PLASMA IMMERSION ION IMPLANTATION (PIII);
POROUS SILICON;
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EID: 4143064764
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.248-249.233 Document Type: Article |
Times cited : (4)
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References (13)
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