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Volumn 248-249, Issue , 1997, Pages 233-236

Plasma immersion ion implantation of nitrogen into porous silicon layers

Author keywords

Ion Beam Analysis; Ion Implantation; Plasma Immersion; Porous Silicon

Indexed keywords

CRYSTAL IMPURITIES; ION BEAMS; ION IMPLANTATION; NITROGEN; PLASMAS; PRESSURE EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; SUBSTRATES;

EID: 4143064764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.248-249.233     Document Type: Article
Times cited : (4)

References (13)
  • 4
    • 0002384874 scopus 로고
    • eds.: J.-C. Vial and J. Derrien, Springer-Verlag, Berlin
    • A. Halimaoui, Porous Silicon Science and Technology, eds.: J.-C. Vial and J. Derrien, Springer-Verlag, Berlin, 33, (1995).
    • (1995) Porous Silicon Science and Technology , pp. 33
    • Halimaoui, A.1
  • 5
    • 0043103717 scopus 로고
    • eds.: J.-C. Vial and J. Derrien, Springer-Verlag, Berlin
    • R. Herino, Porous Silicon Science and Technology, eds.: J.-C. Vial and J. Derrien, Springer-Verlag, Berlin, 54, (1995).
    • (1995) Porous Silicon Science and Technology , pp. 54
    • Herino, R.1
  • 12
    • 4143143716 scopus 로고
    • Thesis, University of Paris
    • A. Grosman, Thesis, University of Paris 7, 1995
    • (1995) , pp. 7
    • Grosman, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.