Grazing irradiation of porous silicon by 500 keV He ions

Vacuum

Volumn 50, Issue 3-4, 1998, Pages 349-351

  Manuaba, A ^a   Paszti F ^a   Battistig, G ^b   Ortega, C ^c   Grosman, A ^c  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; DENSIFICATION; NITRIDING; NITROGEN; POROSITY; POROUS SILICON; SURFACE STRUCTURE;

GRAZING IRRADIATION; ION IRRADIATION;

ION BOMBARDMENT;

EID: 0032108833     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00066-9     Document Type: Article

References (8)

1. Giaddui, T., Forcey, K. S., Earwaker, L. G., Loni, A., Canham, T. and Halimaoui, A., J. Phys. D.: Appl. Phys., 1995, 255, 1580.
2. Pászti, F., Manuaba, A., Szilágyi, E., Vázsonyi, É. and Vértesy, Z., Nucl. Instr. Meth. B, 1996, 117, 253.
3. Fried, M., Lohner, T., Polgár, O., Petrik, P., Vázsony, É., Bársony, I., Piel, J. P. and Stehle, J. L., Thin Solid Films, 1996, 276, 223.
4. Amsel, G., d'Artemare, E., Battistig, G., Morazzani, V. and Ortega, C., Nuclear Instruments and Methods B, 1997, 122, 99.
5. Morazzani, V., PhD thesis, Univ. of Paris 7, 1996.
6. Halimaoui, A., Porous Silicon Sci. and Techn., ed. J.-C. Vial and J. Derien, Springer Verlag, Berlin, 1994, p. 45.
7. Grosman, A., Ortega, C., Wang, Y. S. and Gandais, M. in Structural and Optical Properties of Porous Silicon Nanostructures, ed. G. Amoto, C. Delure and H. J. von Barrdeleben, Gordon and Breach, 1996, 317.
8. 2-plasma immersion ion implantation of porous silicon layers, in this conference.