Characterization of different porous silicon structures by spectroscopic ellipsometry

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 223-227

  Fried, M ^a   Lohner, T ^a   Polgar O ^a   Petrik, P ^a,c   Vazsonyi E ^a   Barsony I ^a   Piel, J P ^b   Stehle, J L ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b SOPRA   (France)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

Ellipsometry; Ion implantation; Silicon

Indexed keywords

ARGON; COMPOSITION EFFECTS; ELLIPSOMETRY; GRAIN BOUNDARIES; INTERFACES (MATERIALS); ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; POROSITY; SPECTROSCOPIC ANALYSIS;

POROUS SILICON LAYERS;

POROUS SILICON;

EID: 0030124829     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08058-9     Document Type: Article

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