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Volumn 158, Issue 1, 1999, Pages 658-664

Three-dimensional scanning of ion-implanted porous silicon

Author keywords

[No Author keywords available]

Indexed keywords

DENSIFICATION; ION IMPLANTATION; POROSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY;

EID: 0343081368     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00386-9     Document Type: Article
Times cited : (16)

References (15)
  • 1
    • 0004140205 scopus 로고    scopus 로고
    • INSPEC, The Institution of Electrical Engineers, London, UK
    • L. Canham, Properties of Porous Silicon, INSPEC, The Institution of Electrical Engineers, London, UK, 1997.
    • (1997) Properties of Porous Silicon
    • Canham, L.1
  • 15
    • 85031589802 scopus 로고    scopus 로고
    • J.F. Ziegler, J.P. Biersack, TRIM95 code
    • J.F. Ziegler, J.P. Biersack, TRIM95 code.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.