Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 141-146

  Job, R ^a   Ma, Y ^a   Huang, Y L ^a   Ulyashin, A G ^a   Fahrner, W R ^a   Beaufort, M F ^b   Barbot, J F ^b  

^a UNIVERSITY OF HAGEN   (Germany)

^b UNIVERSITÉ DE POITIERS   (France)

Author keywords

AFM; Hydrogen in Silicon; Hydrogen Related Defects; Plasma Hydrogenation; Platelets; Raman Spectroscopy; XTEM

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARGE COUPLED DEVICES; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DIFFUSION; DISSOLUTION; HIGH TEMPERATURE EFFECTS; HYDROGEN BONDS; HYDROGENATION; PLASMAS; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGEN RELATED DEFECTS; PLASMA HYDROGENATION;

SILICON WAFERS;

EID: 1642438231     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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