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Volumn 82-84, Issue , 2002, Pages 139-144

Raman spectroscopic analysis of hydrogen plasma treated Czochralski silicon

(3) Job, R a Ulyashin, A G a Fahrner, W R a

Author keywords

Annealing; Hydrogen in silicon; Hydrogen molecules; Hydrogen plasma treatments; Platelets; Raman spectroscopy; Si H bonds; Voids

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; CRYSTAL ORIENTATION; HYDROGEN; MOLECULAR VIBRATIONS; MOLECULES; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; THERMAL EFFECTS; THICKNESS MEASUREMENT;

HYDROGEN PLASMA TREATED CZOCHRALSKI SILICON; PLATELETS; TETRAHEDRAL INTERSTITIAL POSITION;

SEMICONDUCTING SILICON;

EID: 0036127799 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (12)

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