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Volumn 82-84, Issue , 2002, Pages 331-340

Iron solubility in boron-doped silicon and Fe gettering mechanism in p/p+ epitaxial wafers

(4) Shabani, M B a Shiina, Y a Shimanuki, S a Kirscht, F G a

Author keywords

Cz boron doped silicon; Diffusion; Gettering; Graphite furnace atomic absorption spectroscopy; Inductively coupled plasma mass spectroscopy; Iron; Relaxation gettering; Room temperature acid vapor phase decomposition; Segregation gettering; Solubility

Indexed keywords

ANNEALING; DECOMPOSITION; DIFFUSION; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; SEMICONDUCTING SILICON; SOLUBILITY; TEMPERATURE;

GETTERING; GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROSCOPY; ROOM TEMPERATURE ACID VAPOR PHASE DECOMPOSITION;

IRON;

EID: 0036131715 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (11)

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