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Applied Physics A: Materials Science and Processing

Volumn 78, Issue 6, 2004, Pages 921-923

Interfacial structures of LaAlO3 films on Si(100) substrates

(7) Lu, X B a,b Liu, Z G a Shi, G H a Ling, H Q a Zhou, H W b Wang, X P b Nguyen, B Y c

a NANJING UNIVERSITY (China)

b MOTOROLA INC (United States)

c MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; CAPACITANCE; LANTHANUM COMPOUNDS; PERMITTIVITY; PULSED LASER DEPOSITION; REACTION KINETICS; SUBSTRATES; SURFACE STRUCTURE; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRIC DEPOSITION; INTERFACIAL STRUCTURE;

METALLIC FILMS;

EID: 1642367766 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2090-z Document Type: Article

Times cited : (17)

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