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Volumn , Issue , 1991, Pages 176-180
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Analysis of silicon carbide power device performance
a a
a
NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC RECTIFIERS--PERFORMANCE;
SEMICONDUCTING SILICON COMPOUNDS--APPLICATIONS;
SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER--PERFORMANCE;
DRIFT REGION PROPERTIES;
OUTPUT CHARACTERISTICS CALCULATION;
SCHOTTKY RECTIFIERS;
SILICON CARBIDE POWER DEVICES;
SEMICONDUCTOR DEVICES, MOSFET;
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EID: 0026382624
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (29)
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References (15)
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