High-voltage power MOSFETs reached almost to the silicon limit

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 435-438

  Kobayashi, T ^a   Abe, H ^a   Niimura, Y ^a   Yamada, T ^a   Kurosaki, A ^a   Hosen, T ^a   Fujihira, T ^a  

^a Matsumoto Branch   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC ARCS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC LOSSES; GATES (TRANSISTOR); POWER CONVERTERS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SWITCHING CIRCUITS;

FLY-BACK CONVERTERS;

MOSFET DEVICES;

EID: 0034836355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)