24mΩcm2 680V silicon superjunction MOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 241-244

  Onishi, Yasuhiko ^a   Iwamoto, S ^a   Sato, T ^a   Nagaoka, T ^a   Ueno, K ^a   Fujihira, T ^a  

^a Matsumoto Branch   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; NUMERICAL ANALYSIS; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

POWER DEVICES;

MOSFET DEVICES;

EID: 0036053620     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. High-voltage power MOSFETs reached almost to the Si limit
2. A new generation of high voltage MOSFETs breaks the limit line of silicon
3. Analysis of silicon carbide power device performance
4. Theory of semiconductor superjunction devices