A new 800V lateral MOSFET with dual conduction paths

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 399-402

  Disney, D R ^a   Paul, A K ^a   Darwish, M ^a   Basecki, R ^a   Rumennik, V ^a  

^a Power Integrations   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MICROPROCESSOR CHIPS; POWER CONTROL; SEMICONDUCTOR DOPING;

CHARGE BALANCE; CONDUCTION PATHS;

MOSFET DEVICES;

EID: 0034829396     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. High voltage thin layer devices (RESURF devices)
2. A review of RESURF technology
3. High voltage high current lateral devices
4. A 1200V BiCMOS technology and its applications
5. High performance 600V smart power technology based on thin layer silicon-on-insulator