Vertical multi-RESURF MOSFETs exhibiting record low specific resistance

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 737-740

  Van Dalen, R ^a   Rochefort, C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; VAPOR PHASE EPITAXY;

PHOTO-EMISSION MICROSCOPY (PEM); VAPOR PHASE DOPING (VPD);

MOSFET DEVICES;

EID: 0842331303     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. 2 680V Silicon Superjunction MOSFET", ISPSD, pp.241-244, 2002.
3. T.Kurosaki et al., "200V multi RESURF trench MOSFET (MR-TMOS)", ISPSD, pp.211-214, 2003.
4. M.Rüb et al., "Novel trench concept for the fabrication of compensation devices", ISPSD, pp.203-206, 2003.
5. Y.Kiyota, T.Nakamura, S.Suzuki, T.Inada, "Shallow p-type layers in Si by Rapid Vapor-Phase Doping for high speed bipolar and MOS applications", IEICE Trans. Elec., Vol. E79-C, pp. 554-558, 1996
6. C.Rochefort, R. van Dalen, N.Duhayon, W.Vandervorst, "Manufacturing of high aspect ratio p-n junctions using Vapor Phase Doping for application in multi-Resurf devices", ISPSD, pp.237-240, 2001.
7. C.Hu, "Optimum design of power MOSFETs", IEEE Trans. Elec. Dev., Vol. 31, pp.1693-1700, 1984.