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Volumn 25, Issue 3, 2004, Pages 150-152

Revised Method for Extraction of the Thermal Resistance Applied to Bulk and SOI SiGe HBTs

Author keywords

Heterojunction bipolar transistors (HBTs); Self heating; Silicon on insulator (SOI) technology; Thermal resistance

Indexed keywords

CURRENT DENSITY; HEAT RESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY;

EID: 1642290883     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.824242     Document Type: Article
Times cited : (47)

References (11)
  • 1
    • 0141918452 scopus 로고    scopus 로고
    • Self-heating induced soft degradation of the early voltage in SiGe:C HBTs
    • Oct.
    • M. W. Xu, A. Sibaja-Hernandez, A. Sadovnikov, and S. Decoutere, "Self-heating induced soft degradation of the early voltage in SiGe:C HBTs," IEEE Electron Device Lett., vol. 24, pp. 646-648, Oct., 2003.
    • (2003) IEEE Electron Device Lett. , vol.24 , pp. 646-648
    • Xu, M.W.1    Sibaja-Hernandez, A.2    Sadovnikov, A.3    Decoutere, S.4
  • 2
    • 0030212583 scopus 로고    scopus 로고
    • Thermal effects in HBT emitter resistance extraction
    • Aug.
    • G. Hanington, C. E. Chang, P. J. Zampardi, and P. M. Asbeck, "Thermal effects in HBT emitter resistance extraction," Electron. Lett., vol. 32, pp. 1515-1516, Aug. 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 1515-1516
    • Hanington, G.1    Chang, C.E.2    Zampardi, P.J.3    Asbeck, P.M.4
  • 3
    • 0035562267 scopus 로고    scopus 로고
    • Electromigration current limit of high speed sige bipolar transistors influenced by device self-heating
    • Oct. 15-18
    • K. Brelsford, J.-S. Rieh, P.-C. Wang, and G. Freeman, "Electromigration current limit of high speed sige bipolar transistors influenced by device self-heating," in Proc. Integrated Reliability Workshop Final Report, Oct. 15-18, 2001, pp. 78-82.
    • (2001) Proc. Integrated Reliability Workshop Final Report , pp. 78-82
    • Brelsford, K.1    Rieh, J.-S.2    Wang, P.-C.3    Freeman, G.4
  • 6
    • 1042300823 scopus 로고    scopus 로고
    • Thermal resistance of HBTs on bulk, SOI, and glass
    • Sept
    • W. D. van Noort and R. Dekker, "Thermal resistance of HBTs on bulk, SOI, and glass," Proc. IEEE, pp. 129-132, Sept 2003.
    • (2003) Proc. IEEE , pp. 129-132
    • Van Noort, W.D.1    Dekker, R.2
  • 7
    • 0034497875 scopus 로고    scopus 로고
    • Thermal parameter extraction technique using DC I-V data for HBT transistors
    • Sept. 7-8
    • D. Williams and P. Tasker, "Thermal parameter extraction technique using DC I-V data for HBT transistors," in Proc. High Frequency Post-graduate Student Colloq., Sept. 7-8, 2000, pp. 71-75.
    • (2000) Proc. High Frequency Post-graduate Student Colloq. , pp. 71-75
    • Williams, D.1    Tasker, P.2
  • 10
    • 1642353634 scopus 로고    scopus 로고
    • Wafer-level reliability assessment of SiGe NPN HBTs after high temperature electrical operation
    • Oct. 21-24
    • K. Hofmann, G. Bruegmann, and A. Lill, "Wafer-level reliability assessment of SiGe NPN HBTs after high temperature electrical operation," in Integrated Reliability Workshop Final Rep., Oct. 21-24, 2002, pp. 79-82.
    • (2002) Integrated Reliability Workshop Final Rep. , pp. 79-82
    • Hofmann, K.1    Bruegmann, G.2    Lill, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.