Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2001, Pages 78-82

  Brelsford, Kevin ^a   Rieh, Jae Sung ^a   Wang, Ping Chuan ^a   Freeman, Greg ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROMIGRATION; HEAT RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THERMAL CONDUCTIVITY;

DEVICE SELF-HEATING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035562267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)