Wafer-level reliability assessment of SiCe NPN HBTs after high temperature electrical operation

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 79-82

  Hofmann, K ^a   Bruegmann, G ^a   Lill, A ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; SI-GE ALLOYS;

AFTER HIGH TEMPERATURE; BASE CURRENTS; COLLECTOR CURRENTS; COMMON-EMITTER CURRENT GAIN; HIGHEST TEMPERATURE; PACKAGE LEVELS; RELIABILITY ASSESSMENTS; STRESS CURRENT; WAFER LEVEL; WAFER LEVEL RELIABILITIES;

EXTRAPOLATION;

EID: 1642353634     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194238     Document Type: Conference Paper

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