Thermal effects in HBT emitter resistance extraction

Electronics Letters

Volumn 32, Issue 16, 1996, Pages 1515-1516

  Hanington, G ^a   Chang, C E ^a   Zampardi, P J ^a   Asbeck, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; ESTIMATION; MEASUREMENT ERRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM ARSENIDE; EMITTER RESISTANCE; EXTRAPOLATION; SELF HEATING; SELF HEATING EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030212583     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961017     Document Type: Article

References (2)