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Volumn 24, Issue 10, 2003, Pages 646-648

Self-Heating Induced Soft Degradation of the Early Voltage in SiGe:C HBTs

Author keywords

Early voltage; Output conductance; Self heating; SiGe:C HBTs; Thermal resistance

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HEATING; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0141918452     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817384     Document Type: Article
Times cited : (6)

References (6)
  • 1
    • 0026867578 scopus 로고
    • Self-heating in BJT circuit parameter extraction
    • M. Reisch, "Self-heating in BJT circuit parameter extraction," Solid State Electron., vol. 35, no. 5, pp. 677-679, 1992.
    • (1992) Solid State Electron. , vol.35 , Issue.5 , pp. 677-679
    • Reisch, M.1
  • 2
    • 0025385264 scopus 로고
    • Early voltage in very-narrow-base bipolar transistors
    • Feb.
    • D. J. Roulston, "Early voltage in very-narrow-base bipolar transistors," IEEE Electron Device Lett., vol. 11, pp. 88-89, Feb. 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , pp. 88-89
    • Roulston, D.J.1
  • 3
    • 0025430732 scopus 로고
    • Comments on 'Early voltage in very-narrow-base transistors
    • May
    • J. J. Liou, "Comments on 'Early voltage in very-narrow-base transistors'," IEEE Electron Device Lett., vol. 11, p. 236, May 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , pp. 236
    • Liou, J.J.1
  • 4
    • 0026836042 scopus 로고
    • The effects of carrier-velocity saturation on high-current BJT output resistance
    • Mar.
    • S. G. Lee and R. M. Fox, "The effects of carrier-velocity saturation on high-current BJT output resistance," IEEE Trans. Electron Devices, vol. 39. pp. 629-633, Mar. 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 629-633
    • Lee, S.G.1    Fox, R.M.2
  • 5
    • 0026203454 scopus 로고
    • Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor
    • Aug.
    • T. M. Liu, T. Y. Chiu, V. D. Archer, and H. H. Kim, "Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor," IEEE Trans. Electron Devices, vol. 38, pp. 1845-1851, Aug. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1845-1851
    • Liu, T.M.1    Chiu, T.Y.2    Archer, V.D.3    Kim, H.H.4
  • 6
    • 0017526887 scopus 로고
    • The current dependency of the output conductance of voltage-driven bipolar transistors
    • Aug.
    • G. Meijer, "The current dependency of the output conductance of voltage-driven bipolar transistors," IEEE J. Solid-State Circuits, vol. SC-12, pp. 428-29, Aug. 1977.
    • (1977) IEEE J. Solid-state Circuits , vol.SC-12 , pp. 428-429
    • Meijer, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.