The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

Journal of Physics Condensed Matter

Volumn 16, Issue 9, 2004, Pages 1539-1545

  Zhao, Yiying ^a   Li, Dongsheng ^a   Ma, Xiangyang ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HEAVILY BORON DOPED SILICON WAFERS; LIGHTLY DOPED WAFERS; OXYGEN PRECIPITATION; RAMPING PROCESS; RAMPING RATE;

ANTIMONY; ARSENIC; BORON; CRYSTAL GROWTH FROM MELT; DENSITY OF GASES; OXYGEN; PRECIPITATION (CHEMICAL); REACTION KINETICS; SEMICONDUCTOR DOPING;

SILICON WAFERS;

EID: 1642266425     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/9/003     Document Type: Article

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