A method for studying the grown-in defect density spectra in Czochralski silicon wafers

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1447-1456

  Kissinger, G ^a   Graf D ^b   Lambert, U ^b   Richter, H ^a,c  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INFRARED RADIATION; LIGHT SCATTERING; SEMICONDUCTOR DEVICE MODELS; STACKING FAULTS;

DEFECT DENSITY SPECTRA; INFRARED LIGHT SCATTERING;

SILICON WAFERS;

EID: 0031125248     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837610     Document Type: Article

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