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Volumn 256, Issue 3-4, 2003, Pages 261-265

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Author keywords

A1. Doping; A1. Oxygen; A2. Czochralski method; A2. Growth from melt; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

AMORPHOUS MATERIALS; ANTIMONY; EVAPORATION; OXYGEN; REDUCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMODYNAMICS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0041669365     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01372-1     Document Type: Article
Times cited : (7)

References (13)
  • 10
    • 0042622066 scopus 로고    scopus 로고
    • The Science Press, Beijing, China, in Chinese
    • T. Cao, B. Guo, Series of Inorganic Chemistry, Vol. 4, The Science Press, Beijing, China, 1998 (in Chinese).
    • (1998) Series of Inorganic Chemistry , vol.4
    • Cao, T.1    Guo, B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.