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Volumn 256, Issue 3-4, 2003, Pages 261-265
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Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon
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Author keywords
A1. Doping; A1. Oxygen; A2. Czochralski method; A2. Growth from melt; A2. Single crystal growth; B2. Semiconducting silicon
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Indexed keywords
AMORPHOUS MATERIALS;
ANTIMONY;
EVAPORATION;
OXYGEN;
REDUCTION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
THERMODYNAMICS;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
CRYSTAL PULLERS;
CRYSTAL GROWTH FROM MELT;
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EID: 0041669365
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(03)01372-1 Document Type: Article |
Times cited : (7)
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References (13)
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