Behavior of defects in heavily boron doped Czochralski silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 A, 1997, Pages

  Ono, Toshiaki ^a   Asayama, Eiichi ^a   Horie, Hiroshi ^a   Hourai, Masataka ^a   Sano, Masakazu ^a   Tsuya, Hideki ^a   Nakai, Kiyomichi ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); MORPHOLOGY; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; STACKING FAULTS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

BORON DOPED CZOCHRALSKI SILICON;

SILICON WAFERS;

EID: 0031095979     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l249     Document Type: Article

References (16)